Tantalum Sputtering Target - Goodfellow

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Pt, Cu, Al

Tantalum (Ta) is a blue-grey refractory metal and is an excellent choice for sputtering target material because it has a strong resistance to corrosion, excellent electrical conductivity, and a high melting point. Tantalum, can be deposited by both sputtering and evaporation.

The Common Uses of Tantalum in Thin Film Form

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Tantalum (Ta) is a refractory metal critical to the architecture of microchips. High purity Ta targets are used to sputter microscopic thin layers of tantalum on silicon wafers, enabling the manufacturing semiconductor logic chips with high performance. In addition, it is used as a diffusion barrier in semiconductor processing, and as a protective coating in the medical industry.

What are the Typical Properties of Ta in Thin Film Form?

Tantalum thin films offer excellent electrical and thermal conductivity, and a high melting point. The electrical conductivity of Ta is relatively low, but it is still much higher than other materials such as aluminum and copper. In addition, Tantalum is especially resistant to chemicals at temperatures below 150 °C and can only be dissolved with hydrofluoric acid. It has the fourth-highest melting point of all metals and is able to form extremely thin and protective oxide layers for high-quality capacitors,

What are the Typical Deposition Conditions for Tantalum Thin Films by Sputtering?

When depositing Tantalum thin films by sputtering, a substrate temperature of approximately 50-200C is typically used. The base pressure should be10-8 Torr and the Ar background gas should bein the range of 0.2-10 mTorr. The sputtering power is usually between 0.1 and 10 watts per square centimeter. The sputtering time is usually between 0.5 and 30 minutes depending on the thickness required.

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Pt, Cu, Al

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